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Other articles related with "gallium nitride"：
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18508 |
Yuefei Cai(蔡月飞), Jie Bai(白洁), and Tao Wang(王涛) |
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Review of a direct epitaxial approach to achieving micro-LEDs |
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Chin. Phys. B
2023 Vol.32 (1): 18508-018508
[Abstract]
(360)
[HTML 0 KB]
[PDF 3004 KB]
(366)
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47103 |
Qiu-Ling Qiu(丘秋凌), Shi-Xu Yang(杨世旭), Qian-Shu Wu(吴千树), Cheng-Lang Li(黎城朗), Qi Zhang(张琦), Jin-Wei Zhang(张津玮), Zhen-Xing Liu(刘振兴), Yuan-Tao Zhang(张源涛), and Yang Liu(刘扬) |
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Self-screening of the polarized electric field in wurtzite gallium nitride along [0001] direction |
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Chin. Phys. B
2022 Vol.31 (4): 47103-047103
[Abstract]
(419)
[HTML 1 KB]
[PDF 743 KB]
(174)
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36103 |
Zheng-Zhao Lin(林正兆), Ling Lü(吕玲), Xue-Feng Zheng(郑雪峰), Yan-Rong Cao(曹艳荣), Pei-Pei Hu(胡培培), Xin Fang(房鑫), and Xiao-Hua Ma(马晓华) |
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Effect of heavy ion irradiation on the interface traps of AlGaN/GaN high electron mobility transistors |
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Chin. Phys. B
2022 Vol.31 (3): 36103-036103
[Abstract]
(363)
[HTML 1 KB]
[PDF 1500 KB]
(209)
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97302 |
Mingchen Hou(侯明辰), Gang Xie(谢刚), Qing Guo(郭清), and Kuang Sheng(盛况) |
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Protection of isolated and active regions in AlGaN/GaN HEMTs using selective laser annealing |
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Chin. Phys. B
2021 Vol.30 (9): 97302-097302
[Abstract]
(388)
[HTML 1 KB]
[PDF 1615 KB]
(70)
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27301 |
Tao Fang(房涛), Ling-Qi Li(李灵琪), Guang-Rui Xia(夏光睿), and Hong-Yu Yu(于洪宇) |
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Modeling, simulations, and optimizations of gallium oxide on gallium-nitride Schottky barrier diodes |
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Chin. Phys. B
2021 Vol.30 (2): 27301-0
[Abstract]
(828)
[HTML 1 KB]
[PDF 600 KB]
(353)
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107201 |
Tao-Tao Que(阙陶陶), Ya-Wen Zhao(赵亚文), Qiu-Ling Qiu(丘秋凌), Liu-An Li(李柳暗), Liang He(何亮), Jin-Wei Zhang(张津玮), Chen-Liang Feng(冯辰亮), Zhen-Xing Liu(刘振兴), Qian-Shu Wu(吴千树), Jia Chen(陈佳), Cheng-Lang Li(黎城朗), Qi Zhang(张琦), Yun-Liang Rao(饶运良), Zhi-Yuan He(贺致远), and Yang Liu (刘扬)† |
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Evaluation of stress voltage on off-state time-dependent breakdown for GaN MIS-HEMT with SiNx gate dielectric |
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Chin. Phys. B
2020 Vol.29 (10): 107201-
[Abstract]
(639)
[HTML 1 KB]
[PDF 1171 KB]
(114)
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37201 |
Tao-Tao Que(阙陶陶), Ya-Wen Zhao(赵亚文), Liu-An Li(李柳暗), Liang He(何亮), Qiu-Ling Qiu(丘秋凌), Zhen-Xing Liu(刘振兴), Jin-Wei Zhang(张津玮), Jia Chen(陈佳), Zhi-Sheng Wu(吴志盛), Yang Liu(刘扬) |
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Effect of overdrive voltage on PBTI trapping behavior in GaN MIS-HEMT with LPCVD SiNx gate dielectric |
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Chin. Phys. B
2020 Vol.29 (3): 37201-037201
[Abstract]
(626)
[HTML 1 KB]
[PDF 1180 KB]
(155)
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67701 |
Xue Ji(吉雪), Wen-Xiu Dong(董文秀), Yu-Min Zhang(张育民), Jian-Feng Wang(王建峰), Ke Xu(徐科) |
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Fabrication and characterization of one-port surface acoustic wave resonators on semi-insulating GaN substrates |
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Chin. Phys. B
2019 Vol.28 (6): 67701-067701
[Abstract]
(642)
[HTML 1 KB]
[PDF 1232 KB]
(174)
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58501 |
Zhi-Feng Tian(田志锋), Peng Xu(徐鹏), Yao Yu(余耀), Jian-Dong Sun(孙建东), Wei Feng(冯伟), Qing-Feng Ding(丁青峰), Zhan-Wei Meng(孟占伟), Xiang Li(李想), Jin-Hua Cai(蔡金华), Zhong-Xin Zheng(郑中信), Xin-Xing Li(李欣幸), Lin Jin(靳琳), Hua Qin(秦华), Yun-Fei Sun(孙云飞) |
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Responsivity and noise characteristics of AlGaN/GaN-HEMT terahertz detectors at elevated temperatures |
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Chin. Phys. B
2019 Vol.28 (5): 58501-058501
[Abstract]
(825)
[HTML 1 KB]
[PDF 741 KB]
(319)
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37302 |
Mingchen Hou(侯明辰), Gang Xie(谢刚), Kuang Sheng(盛况) |
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Mechanism of Ti/Al/Ni/Au ohmic contacts to AlGaN/GaN heterostructures via laser annealing |
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Chin. Phys. B
2019 Vol.28 (3): 37302-037302
[Abstract]
(725)
[HTML 1 KB]
[PDF 2166 KB]
(207)
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26801 |
San-Jie Liu(刘三姐), Ying-Feng He(何荧峰), Hui-Yun Wei(卫会云), Peng Qiu(仇鹏), Yi-Meng Song(宋祎萌), Yun-Lai An(安运来), Abdul Rehman(阿布度-拉赫曼), Ming-Zeng Peng(彭铭曾), Xin-He Zheng(郑新和) |
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PEALD-deposited crystalline GaN films on Si (100) substrates with sharp interfaces |
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Chin. Phys. B
2019 Vol.28 (2): 26801-026801
[Abstract]
(752)
[HTML 1 KB]
[PDF 2416 KB]
(232)
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88504 |
Li-Wen Cheng(程立文), Jian Ma(马剑), Chang-Rui Cao(曹常锐), Zuo-Zheng Xu(徐作政), Tian Lan(兰天), Jin-Peng Yang(杨金彭), Hai-Tao Chen(陈海涛), Hong-Yan Yu(于洪岩), Shu-Dong Wu(吴曙东), Shun Yao(尧舜), Xiang-Hua Zeng(曾祥华), Zai-Quan Xu(徐仔全) |
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Improved carrier injection and confinement in InGaN light-emitting diodes containing GaN/AlGaN/GaN triangular barriers |
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Chin. Phys. B
2018 Vol.27 (8): 88504-088504
[Abstract]
(789)
[HTML 1 KB]
[PDF 799 KB]
(236)
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68106 |
Wu Jie-Jun (吴洁君), Wang Kun (王昆), Yu Tong-Jun (于彤军), Zhang Guo-Yi (张国义) |
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GaN substrate and GaN homo-epitaxy for LEDs: Progress and challenges |
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Chin. Phys. B
2015 Vol.24 (6): 68106-068106
[Abstract]
(936)
[HTML 1 KB]
[PDF 960 KB]
(774)
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96802 |
Zhao Yun (赵云), Wang Gang (王钢), Yang Huai-Chao (杨怀超), An Tie-Lei (安铁雷), Chen Min-Jiang (陈闽江), Yu Fang (余芳), Tao Li (陶立), Yang Jian-Kun (羊建坤), Wei Tong-Bo (魏同波), Duan Rui-Fei (段瑞飞), Sun Lian-Feng (孙连峰) |
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Direct growth of graphene on gallium nitride by using chemical vapor deposition without extra catalyst |
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Chin. Phys. B
2014 Vol.23 (9): 96802-096802
[Abstract]
(577)
[HTML 1 KB]
[PDF 990 KB]
(1483)
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77303 |
Feng Qian (冯倩), Du Kai (杜锴), Li Yu-Kun (李宇坤), Shi Peng (时鹏), Feng Qing (冯庆) |
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Effect of annealing on performance of PEDOT：PSS/n-GaN Schottky solar cells |
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Chin. Phys. B
2014 Vol.23 (7): 77303-077303
[Abstract]
(611)
[HTML 1 KB]
[PDF 967 KB]
(840)
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28802 |
Feng Qian (冯倩), Shi Peng (时鹏), Li Yu-Kun (李宇坤), Du Kai (杜锴), Wang Qiang (王强), Feng Qing (冯庆), Hao Yue (郝跃) |
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Hybrid solar cell based on polythiophene and GaN nanoparticles composite |
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Chin. Phys. B
2014 Vol.23 (2): 28802-028802
[Abstract]
(530)
[HTML 1 KB]
[PDF 1846 KB]
(780)
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106107 |
Tang Cen (汤岑), Xie Gang (谢刚), Zhang Li (张丽), Guo Qing (郭清), Wang Tao (汪涛), Sheng Kuang (盛况) |
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Electric field modulation technique for high-voltage AlGaN/GaN Schottky barrier diodes |
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Chin. Phys. B
2013 Vol.22 (10): 106107-106107
[Abstract]
(945)
[HTML 1 KB]
[PDF 725 KB]
(686)
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87901 |
Wang Xiao-Hui (王晓晖), Shi Feng (石峰), Guo Hui (郭晖), Hu Cang-Lu (胡仓陆), Cheng Hong-Chang (程宏昌), Chang Ben-Kang (常本康), Ren Ling (任玲), Du Yu-Jie (杜玉杰), Zhang Jun-Ju (张俊举 ) |
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The optimal thickness of transmission-mode GaN photocathode |
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Chin. Phys. B
2012 Vol.21 (8): 87901-087901
[Abstract]
(1457)
[HTML 1 KB]
[PDF 459 KB]
(843)
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30601 |
Fu Xiao-Qian(付小倩), Chang Ben-Kang(常本康), Qian Yun-Sheng(钱芸生), and Zhang Jun-Ju(张俊举) |
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In-situ multi-information measurement system for preparing gallium nitride photocathode |
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Chin. Phys. B
2012 Vol.21 (3): 30601-030601
[Abstract]
(1137)
[HTML 1 KB]
[PDF 125 KB]
(604)
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17304 |
Feng Qian(冯倩), Xing Tao(邢韬), Wang Qiang(王强), Feng Qing(冯庆), Li Qian(李倩), Bi Zhi-Wei(毕志伟), Zhang Jin-Cheng(张进成), and Hao Yue(郝跃) |
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A study of GaN MOSFETs with atomic-layer-deposited Al2O3 as the gate dielectric |
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Chin. Phys. B
2012 Vol.21 (1): 17304-017304
[Abstract]
(1365)
[HTML 1 KB]
[PDF 244 KB]
(1586)
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76804 |
Guo Xi (郭希), Wang Yu-Tian (王玉田), Zhao De-Gang (赵德刚), Jiang De-Sheng (江德生), Zhu Jian-Jun (朱建军), Liu Zong-Shun (刘宗顺), Wang Hui (王辉), Zhang Shu-Ming (张书明), Qiu Yong-Xin (邱永鑫), Xu Ke (徐科), Yang Hui (杨辉) |
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Microstructure and strain analysis of GaN epitaxial films using in-plane grazing incidence x-ray diffraction |
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Chin. Phys. B
2010 Vol.19 (7): 76804-076804
[Abstract]
(1728)
[HTML 1 KB]
[PDF 803 KB]
(2821)
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107307 |
Long Hao(龙浩), Fang Hao(方浩), Qi Sheng-Li(齐胜利), Sang Li-Wen(桑丽雯), Cao Wen-Yu(曹文彧), Yan Jian(颜建), Deng Jun-Jing(邓俊静), Yang Zhi-Jian(杨志坚), and Zhang Guo-Yi(张国义) |
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Invariable optical properties of phosphor-free white light-emitting diode under electrical stress |
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Chin. Phys. B
2010 Vol.19 (10): 107307-107307
[Abstract]
(1612)
[HTML 1 KB]
[PDF 2337 KB]
(902)
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107206 |
Li Shu-Ti(李述体), Cao Jian-Xing(曹健兴), Fan Guang-Han(范广涵), Zhang Yong(章勇), Zheng Shu-Wen(郑树文), and Su Jun(苏军) |
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GaP layers grown on GaN with and without buffer layers |
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Chin. Phys. B
2010 Vol.19 (10): 107206-107206
[Abstract]
(1514)
[HTML 1 KB]
[PDF 1570 KB]
(1501)
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1637 |
Xu Da-Qing(徐大庆), Zhang Yi-Men(张义门), Zhang Yu-Ming(张玉明), Li Pei-Xian(李培咸), and Wang Chao(王超) |
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Raman scattering studies on manganese ion-implanted GaN |
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Chin. Phys. B
2009 Vol.18 (4): 1637-1642
[Abstract]
(1647)
[HTML 1 KB]
[PDF 198 KB]
(632)
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1360 |
Li Xin-Hua(李新化), Zhong Fei(钟飞), Qiu Kai(邱凯), Yin Zhi-Jun(尹志军), and Ji Chang-Jian(姬长建) |
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Effect of double AlN buffer layer on the qualities of GaN films grown by radio-frequency molecular beam epitaxy |
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Chin. Phys. B
2008 Vol.17 (4): 1360-1363
[Abstract]
(1444)
[HTML 1 KB]
[PDF 1392 KB]
(683)
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2786 |
Zhong Fei(钟飞), Li Xin-Hua(李新化), Qiu Kai(邱凯), Yin Zhi-Jun(尹志军), Ji Chang-Jian(姬长建), Cao Xian-Cun(曹先存), Han Qi-Feng(韩奇峰), Chen Jia-Rong(陈家荣), and Wang Yu-Qi(王玉琦) |
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GaN layers with different polarities prepared by radio frequency molecular beam epitaxy and characterized by Raman scattering |
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Chin. Phys. B
2007 Vol.16 (9): 2786-2790
[Abstract]
(1290)
[HTML 1 KB]
[PDF 1084 KB]
(974)
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2141 |
Zhang Chun-Guang (张春光), Bian Liu-Fang (卞留芳), Chen Wei-De (陈维德) |
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Photoluminescence study on Eu-implanted GaN |
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Chin. Phys. B
2005 Vol.14 (10): 2141-2144
[Abstract]
(972)
[HTML 0 KB]
[PDF 215 KB]
(512)
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